Формирование ncl-Si в аморфной матрице a-SiO-=SUB=-x-=/SUB=- : H, расположенной вблизи анода и на катоде, с помощью модулированной по времени DC-плазмы с (SiH_4-Ar-O-=SUB=-2-=/SUB=-)-газовой фазой (C-=SUB=-O_2-=/SUB=-=21.5 мол%)

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ژورنال

عنوان ژورنال: Физика и техника полупроводников

سال: 2019

ISSN: 0015-3222

DOI: 10.21883/ftp.2019.11.48453.9206